Descripción
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The use of Ga-Au alloys of different compositions as metal catalysts for the growth of abrupt SiGe/Si nanowire axial heterostructures has been investigated. The heterostructures grown in a continuous process by just switching the gas precursors, show uniform nanowire diameters, almost abrupt compositional changes and no defects between the different sections. These features represent significant improvements over the results obtained using pure Au. | |
Internacional
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Si |
Nombre congreso
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Materials Research Society 2012 Fall Meeting |
Tipo de participación
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960 |
Lugar del congreso
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Boston |
Revisores
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Si |
ISBN o ISSN
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1946-4274 |
DOI
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DOI: 10.1557/opl.2013.273 |
Fecha inicio congreso
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25/11/2012 |
Fecha fin congreso
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30/11/2012 |
Desde la página
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1 |
Hasta la página
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6 |
Título de las actas
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Materials Research Society Symposium Proceedings 1510, MRS Online Proceedings Library |